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SINOPRO-The Exclusive Agency In Korea
Product:
Silicon Sputtering Target
Product No.:
SP1110
Element:
Si
Purity:
5N, 6N
Shape:
Planar target, Rotary target
Maker:
XINK(CN)
Supplier:
SINOPRO-The Exclusive Agency In Korea

 Products Process

Product Introduction

Polycrystalline silicon, also called polysilicon or poly-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry.Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process. This process involves distillation of volatile silicon compounds, and their decomposition into silicon at high temperatures. An emerging, alternative process of refinement uses a fluidized bed reactor. The photovoltaic industry also produces upgraded metallurgical-grade silicon (UMG-Si), using metallurgical instead of chemical purification processes. When produced for the electronics industry, polysilicon contains impurity levels of less than one part per billion (ppb), while polycrystalline solar grade silicon (SoG-Si) is generally less pure. 

 

The polysilicon feedstock – large rods, usually broken into chunks of specific sizes and packaged in clean rooms before shipment – is directly cast into multicrystalline ingots or submitted to a recrystallization process to grow single crystal boules. The products are then sliced into thin silicon wafers and used for the production of solar cells, integrated circuits and other semiconductor devices.

Silicon sputtering  target, as a very important functional materials, it mainly used for depositing SiO2, Si3N4 and other dielectric layer by magnetic sputtering process. Those thin films are characterized by excellent hardness, optic, dielectric properties, wear and corrosion resistance, which is widely applied to the field of  LCD transparent conducting glass, LOW-E building  glass and micro-electronics.

 

Type: poly-crystalline or mono-crystalline

Purity: 5N, 6N

Available shape: Planar, Rotary

Growth method: Czochralski (CZ)

Density:2.33g/cm3

Conductivity type: P type (Boron doped) & N type (phosphorus doped)

Dimension:

length:300mm max

width:150mm max

diameter:300mm max

thickness:3-12mm

tolerance:±0.1mm

Specific resistance:0.005-0.02 ohm.cm

                                 1-10 ohm.cm

                                 10 ohm.cm min 

Planeness (TIR): < 1.2μm

Partial planeness (STIR): <0.3μm

Warp: <30μm