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Aluminum Copper Sputtering Target is produced by melting technology, usually used for IC production as interconects materials. Comparing to aluminium interconnects, high purity aluminium copper AlCu(0.5-4%) interconnects have more uniform inner micro-structure, and the interconnects’ electromigration and diffusion to wafer can be improved effectively. With up to 5N purity, uniform grain size, lower oxygen content, end user can obtain constant erosion rates as well as high purity and homogeneous thin film coating during PVD process.
In the production of integrated circuits, the phenomenon of diffusion of silicon into the aluminum interconnect layer is common. If a saturated concentration of silicon is added to the aluminum to form an aluminum-silicon alloy, the problem can be effectively improved. So we also produce Aluminum silicon AlSi sputtering target and Aluminum silicon copper AlSiCu sputtering target for IC application.
Available Composition: AlCu99.5/0.5wt%, AlCu99/1wt%, AlCu98/2wt%, AlCu95/5wt%
Below form is a typically Certificate of analysis for 4N high purity Aluminum Copper 99/1wt% sputtering target.
Analytical Methods: 1. Metallic elements were analyzed using ICP-OES. 2. Gas elements were analyzed using LECO.