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Tungsten Titanium Sputtering Targets are produced by powder metallurgy technology, and widely used for semiconductor and thin film solar cells.
For semiconductor application, WTi10wt% thin film is used as diffusion barrier and adhesion layer, to separates the metallization layers from semiconductor, for instance, separate aluminium from silicon, or copper from silicon. Thus, the function of semiconductor in microchips can be improved significantly.
For thin film solar cells, WTi10wt% thin films are also used as barrier layer to prevents iron atoms in steel substrate diffuse to molybdenum back contact and CIGS semiconductor.Tungsten Titanium targets are also used for LED and tool coating.
Our factory can produce WTi 90/10wt%, WTi 85/15wt%, special composition can be customized, the actual targets' density > 99%, and average grain size: < 100um. With up to 4N5 purity and special annealing treatment, uniform grain size as well as lower gas content, end user can obtain constant erosion rates and high pure and homogeneous thin film coating during PVD process.
Below form is a typically Certificate of analysis for 4N high purity Tungsten Titanium 90/10wt% Sputtering Targets. Analytical Methods: 1. Metallic elements were analyzed using GD-MS. 2. Gas elements were analyzed using LECO.