Home > 사업분야
To Be The Lead Of Global Business Inteligence Service
In the fabrication of integrated circuits, pure gold is generally used as interconnect metal, deposited on a silicon wafer, but Au will diffuse into the silicon wafer to form a high-resistance AuSi compound, which will greatly reduce the current density in the wiring, resulting in the failure of entire wiring system.
So, It is proposed to add a adhesive layer between the gold thin film and silicon wafers. The adhesive layer is usually made of pure nickel, but diffusion also occurs between the nickel layer and the gold conductive layer, so that a barrier layer is needed to prevent diffusion between the gold conductive layer and nickel adhesive layer.
With a high melting point and a large current density, vanadium is chosen to deposit barrier layer. Therefore, nickel sputtering target, vanadium sputtering target, gold sputtering target are all used in the fabrication of integrated circuits.
Nickel vanadium NiV sputtering targets containing 7% vanadium has both advantages of nickel and vanadium, thus adhesive layer and barrier layer can be achieved at a time. NiV alloy is non-magnetic materials, which is conducive to magnetron sputtering. In the electronics information industry, it is gradually replacing pure nickel sputtering targets.
The picture below are two micrographs of our NiV(93/7 wt%) alloy sputtering target, the average grain size＜100μm.
The NiV sputtering targets we produced are high purity, it’s most important benefits are that your films possess an outstanding level of electrical conductivity and minimized particle formation during the PVD process. Below form is a typically Certificate of analysis for 3N5 high purity NiV(93/7wt%) sputtering target.
In addition, we can also produce various nickel alloy targets, such as NiAl, NiCo, NiCu, NiCr, NiW, NiCrSi, NiCrAl and other alloy targets, and can produce according to your different requirements of target composition, dimension and grain size.
Please contact us if you have any requirements. The analytical methods used are: 1. Analysis of metal elements using ICP-OES; 2. Analysis of gas elements using LECO.